Description
The dual active bridge was first introduced over thirty years ago. Since then it has established itself as one of the dominant topologies for high power dc-dc conversion with galvanic isolation. This thesis focuses on the control of the dual active bridge for high frequency and power applications utilizing wide band-gap semiconductors. The high switching frequency and device characteristics of such semiconductors increase the impact of some parasitic effects which need to be accounted for when opting for an open-loop control approach. The open-loop control concept is verified by measurements with dc-dc and ac-dc dual active bridge converter prototypes at high frequency (up to 100 kHz) and high power (up to 20 kW).


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